| PART |
Description |
Maker |
| T15M256B T15M256B-70D T15M256B-70DI T15M256B-70J T |
32K X 8 LOW POWER CMOS STATIC RAM
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| IS65C256AL-25UA3 IS65C256AL-25TLA3 IS65C256AL-25UL |
32K x 8 LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| T15V256A-85RI T15V256A T15V256A-70D T15V256A-70DI |
32K X 8 LOW POWER CMOS STATIC RAM
|
TMT[Taiwan Memory Technology]
|
| IS62C256AL IS62C256AL-45TI IS62C256AL-45TL IS62C25 |
32K X 8 LOW POWER CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IDT71V256SA12PZG8 IDT71V256SA12PZGI8 IDT71V256SA12 |
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)
3.3V, 32K X 8 Static RAM
|
Integrated Device Technology
IDT
|
| IS62LV256L IS62LV256L-20JI IS62LV256L-20J IS62LV25 |
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| W24257A W24257 |
32K*8HIGH SPEED CMOS STATIC RAM
32K*8CMOS STATIC RAM
From old datasheet system
|
Winbond
|
| GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GL |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
|
G-LINK Technology
|
| IS64WV3216BLL-15BLA3 IS64WV3216BLL-15BA3 IS64WV321 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| STK11C88-3WF45I STK11C88-3 STK11C88-3N25 STK11C88- |
32K X 8 NON-VOLATILE SRAM, 45 ns, PDIP28
32K X 8 NON-VOLATILE SRAM, 55 ns, PDIP28
32K x 8 nvSRAM 3.3V QuantumTrap⑩ CMOS Nonvolatile Static RAM
32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM
32K x 8 nvSRAM 3.3V QuantumTrap?/a> CMOS Nonvolatile Static RAM
|
SIMTEK[Simtek Corporation]
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
